Mr. Artur Erlacher Profile

Artur Erlacher

at Bowling Green State Univ

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Author

Publications (6)

Proceedings Article | 31 August 2005 Paper

Laser crossing in thin-film GaAs for all-optical computing realizations

Artur Erlacher, Bruno Ullrich

Proceedings Volume 5907, 590703 (2005) https://doi.org/10.1117/12.615198

KEYWORDS: Interfaces, Thin films, Glasses, Switching, Gallium arsenide, Semiconductors, Reflection, Switches, Absorption, Picosecond phenomena

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Proceedings Article | 7 June 2005 Paper

Absorption and photocurrent properties of low-temperature laser deposited thin-film GaAs on glass

A. Erlacher, M. Ambrico, G. Perna, L. Schiavulli, T. Ligonzo, H. Jaeger, B. Ullrich

Proceedings Volume 5850, (2005) https://doi.org/10.1117/12.633697

KEYWORDS: Gallium arsenide, Absorption, Glasses, Thin films, Crystals, X-rays, Optoelectronics, Thin film deposition, Annealing, Solids

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Proceedings Article | 4 April 2005 Paper

Optical gate realization by laser crossing in thin-film semiconductors on glass

Artur Erlacher, Bruno Ullrich, Ryan Konopinski, Heather Haugan

Proceedings Volume 5723, (2005) https://doi.org/10.1117/12.590760

KEYWORDS: Thin films, Switches, Switching, Gallium arsenide, Semiconductor lasers, Semiconductors, Glasses, Cadmium sulfide, Transmittance, Camera shutters

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Proceedings Article | 15 July 2004 Paper

The formation of GaAs/Si photodiodes by pulsed-laser deposition

Bruno Ullrich, Artur Erlacher, Herbert Jaeger

Proceedings Volume 5339, (2004) https://doi.org/10.1117/12.528546

KEYWORDS: Gallium arsenide, Silicon, X-rays, Crystals, Thin films, Photodiodes, Semiconducting wafers, Doping, Photonic crystals, Interfaces

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Proceedings Article | 6 July 2004 Paper

Optoelectronic multiplexer realization by a GaAs/Si heterostructure formed by pulsed-laser deposition

Bruno Ullrich, Artur Erlacher, Timofey Gerasimov, Elena Komarova, Herbert Jaeger

Proceedings Volume 5359, (2004) https://doi.org/10.1117/12.528544

KEYWORDS: Gallium arsenide, Silicon, Crystals, Multiplexers, Thin films, Optoelectronics, Semiconducting wafers, Laser ablation, X-rays, Diodes

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Proceedings Article | 17 October 2003 Paper

Preparation of thin film GaAs on glass by pulsed-laser deposition

Bruno Ullrich, Artur Erlacher, Satoshi Yano, Raoul Schroeder, Timofey Gerasimov, Heather Haugan

Proceedings Volume 4977, (2003) https://doi.org/10.1117/12.472848

KEYWORDS: Gallium arsenide, Glasses, Crystals, Thin films, Raman spectroscopy, Micro raman spectroscopy, Scanning electron microscopy, Phonons, Luminescence, Laser ablation

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Showing 5 of 6 publications

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