Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in
ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality
native oxide current blocking layer, which simplify the device process. A significant reduction of threshold current and a
distinguished device performance are achieved. The 500μm-diameter device has a current threshold as low as 0.48W.
The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle θparalleland vertical divergence angle θperpendicular are as low as 15.3° and 13.8° without side-lobes at a current of 6A.
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving
passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure,
a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high
efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of
them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large
aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum
output power of 1.4W was demonstrated at CW operation for a 400μm-diameter device. The lasing wavelength shifted to
995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling.
A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device.
The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center
and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8A.
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