Silicon (Si) based photodetectors have been widely used in numerous applications due to their low-cost, high efficiency and good process compatibility. In this paper, a photodetector based on Si mesa heterojunction is reported. Si was doped by ion implantation and used to fabricate a photodetector. The conditions of ion implantation were simulated using a software to obtain the required process parameters before the commencement of the implantation process. The process involved deposition of 100 nm SiO2 film on to the Si substrate, and B ions were injected with 160 keV energy, 6×1014 cm-2 injection dose and at 7° dip angle. After ion implantation, the material was annealed at 900 ℃ for 30 min to repair crystal damages and activate the impurity level. Subsequently, a Si-based mesa heterojunction photodetector was fabricated using a series of standard processes. The photosensitive area of each device unit was 2.04 × 10-2 mm2 . The responsivity of the photodetector in the near ultraviolet and visible bands was more than 0.14 A/W under the bias of -2V. The responsivity of the device was measured using a 1073 K blackbody source, and the voltage responsivity of the blackbody was 1.35×102 V/W. Results from the C-V measurements revealed that the Si has a carrier concentration in the order of 1019 cm-3, which is in good agreement with the simulated results. The experimental results showed that ion implantation has an important effect on the electronic properties of the material and can greatly improve the photoelectric properties of devices.
Silicon has been widely used in the field of low-cost photodetectors. However, the use of traditional silicon material for high performance infrared detectors is hindered by its indirect band gap. Recently, black silicon has attracted the attention of researchers working on optoelectronics as it can be considered a new type of material with high absorption, and expansion of the response band can be achieved by supersaturated doping. Importantly the material is compatible with the silicon process. With the development of science and technology, the application of photodetectors can have a great impact on our lives, so the research on black silicon photodetectors is also becoming popular. Up to now, significant progress has been made in the development of black silicon photodetectors. This paper summarizes the preparation of black silicon materials and the application prospect of black silicon photodetectors.
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