We present our recent research on color centers in Aluminum Gallium Nitride which emit single photons up to room temperature. The mature processing technology which is available for group-III-nitrides and the host material’s optical transparency in the visible and infra-red opens up the possibility of novel applications in nanophotonics and quantum devices. We are working to create suspended photonic devices, including waveguides and photonic crystal cavities, which we will show can guide and enhance the color center emission.
We determine the propagation loss of GaAs photonic crystal waveguides by spectral imaging of the spontaneous emission from the embedded InAs/GaAs quantum dots. The results are compared with the loss obtained by imaging the near field of the out-of-plane radiation of the waveguide mode propagating within the light cone. From the corresponding far field, we furthermore measure the mode wavevector, from which we determine the waveguide dispersion. Additionally, we show that spectral imaging allows to determine the relative efficiencies of the couplers. Using the same experiment, and detailed photonic simulations, we have determined the beta factor and the directionality of the emission of the QDs, finding beta factors up to 99% and high directionalities.
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