Mr. Deepak Bansal Profile

Deepak Bansal

Scientist at CSIR-CEERI

SPIE Involvement:

Author

Area of Expertise:

MEMS , RF MEMS , Packaging

Websites:

Company Website

Publications (6)

SPIE Journal Paper | 14 December 2018

Reduced dielectric charging RF MEMS capacitive switch

Khushbu Mehta, Deepak Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, Maninder Kaur, Prem Kumar, Kamaljit Rangra

JM3, Vol. 17, Issue 04, 045001, (December 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.045001

KEYWORDS: Switches, Dielectrics, Microelectromechanical systems, Electrodes, Bridges, Switching, Temperature metrology, Metals, Capacitance, Reliability

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SPIE Journal Paper | 6 October 2016

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

Prem Kumar, Deepak Bansal, Anuroop Bajpai, Maninder Kaur, Kamaljit Rangra

JM3, Vol. 15, Issue 04, 045001, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.045001

KEYWORDS: Switches, Single point diamond turning, Microelectromechanical systems, Gold, Finite element methods, Photoresist materials, Metals, Capacitance, Etching

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SPIE Journal Paper | 3 September 2015

Design and fabrication of a reduced stiction radio frequency MEMS switch

Deepak Bansal, Anuroop Bajpai, Prem Kumar, Amit Kumar, Maninder Kaur, Kamaljit Rangra

JM3, Vol. 14, Issue 03, 035002, (September 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.035002

KEYWORDS: Switches, Microelectromechanical systems, Metals, Electrodes, Dielectrics, Capacitance, Switching, Oxides, Scanning electron microscopy

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The design, fabrication, and mechanical characterization of a compact-reduced stiction see-saw radio frequency MEMS switch are presented. The switch has a resonance frequency of 9.8 kHz with a corresponding switching speed of 46 μs. Use of a floating metal layer and optimal contact area ensures reduced stiction and smaller capacitive leakage. Overall size of the switch is 0.535 (0.50×1.070) mm2. Reduction in up-state capacitance also results in improvement in self-actuation voltage, insertion, and return loss. The optimized topology has improved the stiction and power handling of the switch.

Proceedings Article | 7 March 2014

Residual stress control during the growth and release process in gold suspended microstructures

Akshdeep Sharma, Deepak Bansal, Amit Kumar, Dinesh Kumar, Kamaljit Rangra

Proceedings Volume 8973, 89730F (2014) https://doi.org/10.1117/12.2041433

KEYWORDS: Gold, Microelectromechanical systems, Plasma, Oxygen, Photoresist materials, Thin films, Electroplating, Plating, Power supplies, Wet etching

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This paper presents the growth and release process effects on the deformation of suspended gold micro-structures. Cantilever type test structures, typically used for RF MEMS devices have been examined. The structures have a thickness of 2μm, produced by patterned gold electro deposition above a sacrificial photoresist layer, then removed by dry release in oxygen plasma ashing and wet release using critical point dryer (CPD). The growth process of gold electroplating is optimized for low residual stress using pulse power supply. Minimum stress 35-60 MPa is obtained at grain size 30-45nm and RMS roughness of the order of 5-8nm. The growth mechanism of structural layer and releasing methods are optimized to obtain planar MEMS structures. The main parameters considered are the initial stress during the growth of electroplated gold and the release process recipes developed for fabrication of metallic structural layer.

SPIE Journal Paper | 5 February 2014

Comparative study of various release methods for gold surface micromachining

Akshdeep Sharma, Prachi Jhanwar, Deepak Bansal, Amit Kumar, Maninder Kaur, Shilpi Pandey, Prem Kumar, Dinesh Kumar, Kamaljit Rangra

JM3, Vol. 13, Issue 01, 013005, (February 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.013005

KEYWORDS: Plasma, Microelectromechanical systems, Gold, Switches, Surface micromachining, Etching, Semiconducting wafers, Oxygen, Photomicroscopy

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A comparison of dry and wet release methods for surface micromachining of metallic structures, such as RF MEMS switches, test structures, bridges, and cantilevers is presented. The dry release process is optimized by varying the concentration of O 2 and CF 4 plasma and RF power. The plasma ashing of the sacrificial layer typically results in damage to metallic structures or stress-related deformation due to rise in temperature (>80°C ). A wet release process using critical point drying (CPD) has been investigated to realize gold-electroplated structures with reduced residual stress. The CPD, being a low-temperature (31.1°C) process, is more suitable for compliant structures without any deformation.

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