Dr. Denis Lefebvre Profile

Dr. Denis Lefebvre

at CRHEA-CNRS

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 5 March 2020 Paper

Electronic coupling in ZnO asymmetric quantum wells for intersubband cascade devices

N. Le Biavan, B. Meng, M. Montes Bajo, J. Tamayo-Arriola, A. Torres-Pardo, D. Lefebvre, M. Hugues, A. Hierro, J. Faist, J.-M. Chauveau

Proceedings Volume 11281, 112811S (2020) https://doi.org/10.1117/12.2547478

KEYWORDS: Quantum wells, Zinc oxide, Absorption, Interfaces, Quantum cascade lasers

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Proceedings Article | 1 March 2019 Paper

Intersubband absorption at normal incidence by m-plane ZnO/MgZnO quantum wells

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro

Proceedings Volume 10919, 109192C (2019) https://doi.org/10.1117/12.2509524

KEYWORDS: Quantum wells, Absorption, Polarization, Transmittance, Zinc oxide, Sensors, Infrared radiation, Semiconductors

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Proceedings Article | 29 September 2017 Presentation

ZnO: from material to unipolar devices (Conference Presentation)

Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrian Hierro, Arnaud Jollivet, Maria Tchernycheva, François Julien, Jean-Michel Chauveau

Proceedings Volume 10353, 1035306 (2017) https://doi.org/10.1117/12.2277195

KEYWORDS: Zinc oxide, Heterojunctions, Doping, Electrons, Optoelectronics, Homoepitaxy, Molecular beam epitaxy, Surface roughness, Gallium arsenide, Quantum cascade lasers

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Proceedings Article | 1 May 2017 Presentation

Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system? (Conference Presentation)

Jean-Michel Chauveau, Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrián Hierro, Patrick Quach, Arnaud Jollivet, Nathalie Isac, Adel Bousseksou, Maria Tchernycheva, François Julien, Borislav Hinkov, Gottfried Strasser, Romain Peretti, Giaccomo Scalari, Jérôme Faist

Proceedings Volume 10105, 101050N (2017) https://doi.org/10.1117/12.2253708

KEYWORDS: Current controlled current source, Oxides, Heterojunctions, Zinc oxide, Quantum wells, Doping, Optical properties, Wide bandgap semiconductors, Interfaces

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