In this paper, the composition, morphology and electrical properties of the passivation layer for CdZnTe detectors were
investigated. A two-step passivation was performed under different conditions, including passivation time, temperature
and NH4F/H2O2 concentration. The obtained passivation layers were characterized by XRD, SEM, XRF and I-V methods.
The results showed that the best passivation condition was with the NH4F/H2O2 concentration of 10wt%, passivation
time of 40min and temperature of 20ºC. Under this condition, the passivation layer was purely oxidized and compact,
and the surface leakage current of CZT crystals was most effectively reduced.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.