Mr. Fumikatsu Uesawa Profile

Fumikatsu Uesawa

at Sony Atsugi Technology Ctr

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 27 March 2007 Paper

Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

Shoji Mimotogi, Fumikatsu Uesawa, Makoto Tominaga, Hiroharu Fujise, Koutaro Sho, Mikio Katsumata, Hiroki Hane, Atsushi Ikegami, Seiji Nagahara, Tatsuhiko Ema, Masafumi Asano, Hideki Kanai, Taiki Kimura, Masaaki Iwai

Proceedings Volume 6520, 652008 (2007) https://doi.org/10.1117/12.711049

KEYWORDS: Lithography, Immersion lithography, Photomasks, Critical dimension metrology, Phase shifting, Lithographic illumination, Phase shifts, Logic, Metals, Semiconductors

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Proceedings Article | 20 October 2006 Paper

A new criterion of mask birefringence for polarized illumination

Kazuya Iwase, Boontarika Thunnakart, Tokihisa Kaneguchi, Ken Ozawa, Toshifumi Yokoyama, Yasutaka Morikawa, Fumikatsu Uesawa

Proceedings Volume 6349, 634951 (2006) https://doi.org/10.1117/12.685360

KEYWORDS: Birefringence, Photomasks, Polarization, Cadmium sulfide, Tolerancing, Electroluminescence, Lithography, Critical dimension metrology, Lawrencium, Wave plates

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Proceedings Article | 20 May 2006 Paper

Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

Kazuya Iwase, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 6283, 628337 (2006) https://doi.org/10.1117/12.681826

KEYWORDS: Photomasks, Tolerancing, Polarization, Immersion lithography, Electroluminescence, Lithography, Error analysis, Lithographic illumination, Birefringence, Fiber optic illuminators

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Proceedings Article | 10 March 2006 Paper

Dry-etch proximity function for model-based OPC beyond 65-nm node

Shunichiro Sato, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 6155, 615504 (2006) https://doi.org/10.1117/12.657043

KEYWORDS: Etching, Optical proximity correction, Model-based design, Silica, Silicon, Data analysis, Data modeling, Edge detection, Instrument modeling, Process modeling

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Proceedings Article | 5 November 2005 Paper

A novel strategy of lithography-error-budget optimization for the 65-nm node: mask specifications for hyper-NA imaging

Kazuya Iwase, Kiichi Ishikawa, Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5992, 59920Y (2005) https://doi.org/10.1117/12.632021

KEYWORDS: Photomasks, Tolerancing, Immersion lithography, Error analysis, Lithography, Electroluminescence, Lithographic illumination, Critical dimension metrology, Scanners, Refractive index

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Proceedings Article | 28 June 2005 Paper

A novel robust optimization method of exposure and mask conditions for beyond 65 nm-node lithography

Koichi Takeuchi, Kazuya Iwase, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617455

KEYWORDS: Chromium, Photomasks, Lithography, Distortion, Critical dimension metrology, Optical proximity correction, Phase shifts, Error analysis, Cadmium, Polarization

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Proceedings Article | 12 May 2005 Paper

Novel robust optimization method of lithographic conditions for correlative multilayers beyond 65 nm node

Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa, Hiroichi Kawahira

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600175

KEYWORDS: Lithography, Metals, Photomasks, SRAF, Optical proximity correction, Signal to noise ratio, Error analysis, Critical dimension metrology, Integrated circuits, Semiconducting wafers

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Proceedings Article | 12 May 2005 Paper

Optical lithography technologies for 45-nm node CMOS

Shoji Mimotogi, Fumikatsu Uesawa, Suigen Kyoh, Hiroharu Fujise, Eishi Shiobara, Mikio Katsumata, Hiroki Hane, Tomohiro Sugiyama, Koutaro Sho, Maki Miyazaki, Kazuhiro Takahata, Hideki Kanai, Kazuya Sato, Kohji Hashimoto

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600948

KEYWORDS: Lithography, Photomasks, Critical dimension metrology, Lens design, Photoresist processing, CMOS technology, Optical lithography, Metals, Logic, Semiconductors

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Proceedings Article | 28 May 2004 Paper

Lithography of choice for the 45 nm node: new medium, new wavelength, or new beam

Fumikatsu Uesawa, Mikio Katsumata, Kazuhisa Ogawa, Koichi Takeuchi, Shinji Omori, Masaki Yoshizawa, Hiroichi Kawahira

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535104

KEYWORDS: Lithography, Photomasks, Semiconducting wafers, Charged-particle lithography, Lithographic illumination, Phase shifts, Optical lithography, Electroluminescence, Photoresist processing, Critical dimension metrology

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Proceedings Article | 29 June 1998 Paper

Influence of underlayer reflection on optical proximity effects in sub-quarter-micron lithography

Atsushi Sekiguchi, Fumikatsu Uesawa, Koichi Takeuchi, Tatsuji Oda

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310764

KEYWORDS: Reflectivity, Manufacturing, Critical dimension metrology, Lithography, Reflection, Silicon, Optical proximity correction, Photomasks, Optics manufacturing, Chemically amplified resists

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Proceedings Article | 26 May 1995 Paper

Subquarter micron optical lithography with practical superresolution technique

Tohru Ogawa, Masaya Uematsu, Fumikatsu Uesawa, Mitsumori Kimura, Hideo Shimizu, Tatsuji Oda

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209302

KEYWORDS: Lithographic illumination, Photomasks, Excimer lasers, Lithography, Phase shifting, Light sources, Photoresist materials, Eye, Image filtering, Distortion

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Proceedings Article | 17 May 1994 Paper

Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology

Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Akihiro Ogura, Satoru Nozawa, Fumikatsu Uesawa, Hideo Shimizu

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175416

KEYWORDS: Photomasks, Transmittance, Mask making, Semiconducting wafers, Etching, Phase shifting, Error analysis, Chromium, Quartz, Phase shifts

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Showing 5 of 12 publications

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