A novel method to fabricate β-(AlGa)2O3 solar-blind photodetector has been demonstrated. The β-Ga2O3 thin film was first deposited on c-plane sapphire substrate by pulsed laser deposition (PLD) and following by high-temperature annealing (1000°C and above). With a proper annealing condition, the PLD deposited β-Ga2O3 film could be transformed from a binary to become a ternary β-(AlGa)2O3 film, which is resulted from the Al atoms of sapphire substrate diffused into the PLD deposited β-Ga2O3 layer by high-temperature driven, and the Ga atoms from β-Ga2O3 thin film to the substrate diffusion as well. By high-temperature driven interdiffusion method, β-(AlGa)2O3 thin film with designed Al composition and film thickness could be achieved, which could cover higher bandgap larger than 4.9 eV. With such a method, one can achieve β-(AlGa)2O3 Solar-blind photodetector with good crystal quality and surface morphology, which also could push the response wavelength even further to the DUV range.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.