Mr. Gerard Klaasse Profile

Gerard Klaasse

at IMEC

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Proceedings Article | 16 August 2004 Paper

Piezoelectric actuation for application in RF-MEMS switches

Gerard Klaasse, Bob Puers, Harrie Tilmans

Proceedings Volume 5455, (2004) https://doi.org/10.1117/12.545687

KEYWORDS: Switches, Electrodes, Aluminum nitride, Bridges, Actuators, Aluminum, Microelectromechanical systems, Metals, Platinum, Etching

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RF-MEMS switches are commonly electrostatically actuated. This way of actuation has the advantage of technological simplicity. However the actuation voltage is relatively high. Piezoelectric actuation can have significantly lower actuation voltages, depending on the used materials and geometries. Analysis shows that clamped-free beams and clamped-clamped beams can have a reasonable deflection when aluminum nitride is used as the piezoelectric material. A five mask monolithic process has been developed for the realization of piezoelectrically actuated cantilevers and RF-MEMS switches. The complexity of this process is comparable with the complexity of the process for electrostatically actuated switches. Deflections of piezoelectrically actuated cantilever beams have been measured. Due to a high stress gradient in the beams, the assumptions that have been made in the analysis are not valid anymore. Finit element simulations were needed to verify the measurement data. The simulations fit with the measurements when the following values are taken for the properties of the aluminum nitrde film: Young's modulus E_p = 320 GPa and piezoelectric coefficient d₃₁ = -3.2 pC/N.

Proceedings Article | 28 September 2001 Paper

Planarization of deep trenches

Cristina Rusu, Gerard Klaasse, Sherif Sedky, Heleen Esch, Brigitte Parmentier, Agnes Verbist, Ann Witvrouw

Proceedings Volume 4557, (2001) https://doi.org/10.1117/12.442970

KEYWORDS: Plasma enhanced chemical vapor deposition, Germanium, Silicon, Low pressure chemical vapor deposition, Etching, Polymers, Deposition processes, Plasma, Semiconducting wafers, Coating

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The ability of various deposition processes and materials to fill and planarize topographical features (trenches deeper than 10 micrometers ) is investigated in this work. Three different deposition processes are considered: LPCVD (Ge), PECVD (Ge, Si₃N₄, SiO₂) and spin coating (BCB, resist, polyimide). Comparing LPCVD and PECVD processes show that, for the same trench width, thick PECVD layers can close off trenches from the top, while thick LPCVD layers fill the trenches completely. The use of PECVD layers is thus advantageous for sealing applications, where a low bottom step coverage is desired. LPCVD layers on the other hand are very useful for planarization purposes where a low ratio between the deposited film thickness and the planarized trench width is desired. Also the deposition of polymers by spin coating yields excellent planarization results with a simpler process and lower thermal budget compared to LPCVD processes. All polymers investigated fill the trenches totally. If these planarization layers are used as sacrificial layers, they should be etched isotropically and selectively with respect to the structural layer. Ge can be etched in oxidizing solutions (H₂O₂/H₂O) and the sacrificial etch of Ge is selective towards Si, SiO₂ and many other layers. SiO₂ can be removed by wet or vapor HF, and resist, polyimide and BCB can be removed by O₂ or O₂/SF₆ plasma. Which layer should be used depends on the trench fill requirements, the thermal budget and the further processing needed.

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