Solar cells (SC) CdS-CdTe were fabricated by successive deposition of CdS and CdTe layers onto a glass substrate with the area 4 cm2 covered by ITO layer using hot wall transport. CdS layers had the thickness 0.8 - 2.0 micrometers , the resistivity (2.0 - 2.8)*104(Omega) *cm and transparency of 65 - 70%. CdTe layers were As doped during growth process and had the resistivity (3 - 7)*105(Omega) *cm. At the illumination of CdS-CdTe heterojunctions with an integral light with the intensity of 80 mW/cm2 (AM1.5) the short circuit current is ISC equals 0.4 - 0.6 mA/cm2 and open circuit voltage is UOC equals 0.4 V. For to enhance photoelectrical parameters the heterostructures were immersed in CdCl2:CH3OH, and then were heat treated in the air. The examination of treatment time and temperature had shown that the optimum temperature is 400 degree(s)C and time interval 40 - 45 min. The illumination of treated structures in the same conditions as non treated had shown that short circuit current reaches ISC equals 16.8 mA/cm2 and open circuit voltage UOC equals 0.54 V. The photosensitivity region is also broadening. Homogeneous photosensitivity in the region from 0.5 micrometers to 0.9 micrometers is observed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.