EUV lithography plays a critical role in semiconductor manufacturing, and EUV pellicles are essential for preventing defects caused by photomask contamination during semiconductor production. As closed film-type membranes face limitations, interest in porous structures, such as carbon nanotubes (CNTs), is growing. Our team has been developing breathable porous silicon nitride (SiN) membranes with hole patterns. We explored wet etching techniques using KOH and TMAH for silicon etching, alongside dry etching technology for deep silicon etching. Although we attempted to create large field-size membranes, fabricating larger membranes proved difficult. So we investigated the contour of the silicon-etched side and improved the abnormal step height at the membrane edges. In a bulge test, we confirmed that the maximum deflection was 27.3μm, and the maximum pressure difference sustained was 7Pa. Remarkably, the membrane did not fracture during the bulge test. Specifically, a 40nm SiN membrane with 100nm hole patterns exhibited a 3.0 percentage point increase in transmittance compared to the 79% of a typical closed-type membrane.
Extreme-ultraviolet (EUV) lithography is a crucial technology in semiconductor manufacturing, and the development of effective pellicles is essential to prevent mask contamination and ensure patterning accuracy. Traditional approaches to improving pellicle transmittance have faced limitations, prompting exploration into novel strategies such as CNT, graphitelike film, or structural modification. In this study, we investigate the mechanical stability and imaging impact of porous pellicles, which can overcome the limitations of conventional structures. Our findings reveal that while porous pellicles induce stress variations, overall residual stress is almost maintained. Imaging simulations demonstrate minimal impact on pattern fidelity, highlighting compatibility with existing lithographic systems. Additionally, we fabricated the silicon nitride porous pellicles and measured EUV transmittance. Experimental results confirm significant increases in EUV transmittance with porous structures, validating their potential for next-generation lithography applications.
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