Dr. Gloria E. Hoefler Profile

Dr. Gloria E. Hoefler

VP Photonics at CSpeed

SPIE Involvement:

Author | Prism Awards Judge

Proceedings Article | 17 April 2000 Paper

High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P light-emitting diodes

Mari Ochiai-Holcomb, Michael Krames, Gloria Hofler, Carrie Carter-Coman, Eugene Chen, Patrick Grillot, Kwang Park, Nathan Gardner, Jen-Wu Huang, Jason Posselt, David Collins, Steve Stockman, M. Craford, Frederick Kish, I. Tan, Tun Tan, Christophe Kocot, Mark Hueschen

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382843

KEYWORDS: Light emitting diodes, External quantum efficiency, Lamps, Light sources and illumination, Luminous efficiency, Quantum efficiency, Semiconducting wafers, Reflection, Solid state lighting, Neon

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Proceedings Article | 4 April 1997 Paper

High-performance AlGaInP light-emitting diodes

Steven Maranowski, Michael Camras, Changhua Chen, Lou Cook, M. Craford, Dennis DeFevere, Robert Fletcher, Gloria Hofler, Frederick Kish, Chihping Kuo, A. Moll, Tim Osentowski, K. Park, Michael Peanasky, S. Rudaz, Dan Steigerwald, Frank Steranka, Steve Stockman, I. Tan, J. Tarn, Jingxi Yu, Mike Ludowise, Virginia Robbins

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271032

KEYWORDS: Light emitting diodes, Aluminium gallium indium phosphide, Semiconductors, External quantum efficiency, Gallium arsenide, Metalloids, Lamps, Internal quantum efficiency, Silicon, Quantum efficiency

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Proceedings Article | 21 December 1994 Paper

Formation of screw-type misfit dislocations on the ZnSxSe1-x/GaAs interface

Li-Hsin Kuo, Lourdes Salamanca-Riba, Bor-Jen Wu, G. Hofler

Proceedings Volume 2346, (1994) https://doi.org/10.1117/12.197255

KEYWORDS: Interfaces, Image segmentation, Transmission electron microscopy, Gallium arsenide, Semiconductor lasers, Electron beams, Information operations, Zinc, Selenium, Heterojunctions

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New sources for heterogeneous nucleation of both <$110> and <110> extended screw-type misfit dislocations to relax the lattice shear stress on the ZnS_xSe_1-x/GaAs interface has been observed for the first time. These are identified as Shockley partial dislocations originating in areas close to the ZnS_xSe_1-x/GaAs interface. The Shockley partials form to accommodate the stacking errors produced upon island coalescence. In-situ electron beam- induced heating studies were carried out to observe the dislocation generation mechanism in the films. Our results show that the stress (sigma) approximately equals 1 X 10⁹ dyne/cm² stored in the ZnS_xSe_1-x films gives rise to bowing of the threading segments of the Shockley partials. The bowing result from the fact that the dislocations are pinned at the film/substrate interface and at the film surface. This process involves an increase in the length of the treading segments under the stress. With further accommodation of the lattice strain, the line tension of the bowing threading segments is relieved by the movement of the pinning points at the film surface accompanied by gliding of the threading segments toward the film/substrate interface. This process takes place by the movement of either one or both of the pinned points at the film surface. Finally, a segment of extended screw- type dislocation is generated when the segments of the Shockley partials reach the ZnS_xSe_1-x/GaAs interface. A <110> extended screw-type interfacial dislocation is generated by gliding of the threading segments of the Shockley partials on (111)-type planes with Burger vectors b equals a/6<121>-type and a/6<211>-type toward the interface. On the other hand, a <110> extended screw-type interfacial dislocation is generated by gliding of the threading segments of the Shockley partials on (111)- type planes with Burger vectors b equals a/6<121>-type and a/6<211>-type toward the interface. Finally, the shear stress between film and substrate is relaxed by the generation of a grid of extended interfacial dislocations with screw components along the <110> and <110> directions.

Proceedings Article | 13 July 1994 Paper

Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface

Li-Hsin Kuo, Lourdes Salamanca-Riba, G. Hofler, Bor-Jen Wu, Michael Haase

Proceedings Volume 2228, (1994) https://doi.org/10.1117/12.179653

KEYWORDS: Zinc, Selenium, Interfaces, Gallium arsenide, Microscopy, Transmission electron microscopy, Molecular beam epitaxy, Gallium

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Conference Committee Involvement (1)

Components and Packaging for Laser Systems XI

25 January 2025 | San Francisco, California, United States

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