We will describe the latest spin-transfer torque magnetoresistive random access memory (STT-MRAM) product family from Everspin Technologies, which is aimed at industrial applications requiring low-latency, high-speed, low bit error rate, and high reliability. The STT-MRAM is built on GlobalFoundries’ 28nm CMOS, uses an expanded SPI (xSPI) interface, and is offered in densities from 4Mb to 128Mb. We describe how continuous process improvements to the magnetic tunnel junctions enabled the required performance in switching speed and bit error rate. We further demonstrate robust operation of the product dies over a full temperature range from -40°C to 105°C as well as their reliability performance in terms of the data retention against high temperature disturbs, the write cycling endurance, and the immunity to in-plane and perpendicular applied magnetic fields.
We present an overview of Everspin’s proprietary Spin-Transfer Torque (STT) MRAM technology. We have optimized our perpendicular MTJ STT-MRAM technology to achieve high-speed reliable switching over the temperature range of -40°C to +85°C with data retention of more than 10 years at +105°C and endurance of greater than 1e15 cycles at -40°C. This advanced STT-MRAM technology has been deployed in commercially available 1Gb ST-DDR4 stand-alone memory and low-latency 64Mb serial peripheral interface (SPI) STT-MRAM products, both integrated on 28 nm CMOS technology.
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