Colloidal quantum dot (QD)-based light-emitting diodes (QLEDs) have achieved peak efficiency comparable to organic light-emitting diodes and are now poised for the development of full-color displays. Simultaneously, the potential of QLEDs is being explored for lasers, AR/VR, lighting, and industrial light sources demanding extended brightness. This study focuses on comprehensive strategies to enhance the brightness of QLEDs beyond the boundary of conventional display applications. Introduction of graded confinement potential into core/shell heterostructured QDs successfully mitigated nonradiative Auger recombination of charged or multiexcitons, often generated under high current density. A tailored top-emission device architecture on Si substrates enabled to extend the range of operational current over 10 A/cm2 . Our QLEDs achieved high brightness (>50 mW) comparable to class-3B lasers.
The stability of the organic light-emitting diode (OLED) at the high temperature is important for their applications to
automotive displays or various lighting applications which are more susceptible to Joule heating problems. In addition, it
is known that the OLED lifetime is limited by the poor thermal stability of the hole-transport layer (HTL) material. Thus,
the improvement of the thermal stability of the HTL layer is essential for enhancing both thermal stability and the
operation lifetime. Here, we report that the thermal stability of OLED device can be significantly enhanced by
introducing an LiF-mixed N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) as a HTL in the OLED having tris(8-
hydroxyquinoline) aluminum (Alq3) as a light-emitting and electron-transport layer. Compared with the reference device
with the α-NPD HTL, the device having a double layer of LiF-mixed α-NPD and α-NPD as a HTL showed an increased
thermal stability up to 170°C without degrading the quantum efficiency of the electroluminescence. In addition, the
driving voltage variation over time (less than 3 V) was significantly suppressed while the reference device shows a
variation over 6 V. The improved device stability is attributed to the enhanced thermal stability of the LiF-mixed α-NPD
layer, which could be estimated from the result that the film morphology of LiF-mixed α-NPD film was nearly
unchanged after heated above the glass transition temperature of α-NPD while that of α-NPD film was significantly
changed.
We studied the hole mobility of molecularly doped hole transport layer (HTL), 4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (α-NPD), as a function of the doping concentration of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) by employing the time-of-flight photoconductivity (TOF-PC) technique. The hole transport is non-dispersive for α-NPD and the hole mobility of pristine α-NPD is about 10-3 cm2/Vs at room temperature. However, the hole mobility decreases with the BCP doping concentration in α-NPD. We characterized the current-voltage-luminance dependence, the EL quantum efficiency, and transient EL response for the devices of ITO/doped α-NPD/Alq3/LiF/Al. The devices with the BCP doped α-NPD show higher EL efficiency compared with the device with pristine α-NPD. The reduced hole mobility in the BCP doped α-NPD enhances the electron-hole balance, resulting in an increased EL efficiency.
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