Mr. Jiarong R. Cui Profile

Jiarong R. Cui

at Virginia Tech

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Proceedings Article | 9 September 2020 Presentation + Paper

Optical gain in Er doped GaN multiple quantum wells

Vinh Ho, Brendan Ryan, Jiarong Cui, Prashant Pradhan, Nguyen Vinh

Proceedings Volume 11467, 114671Q (2020) https://doi.org/10.1117/12.2567850

KEYWORDS: Gallium nitride, Quantum wells, Infrared radiation, Silicon, Imaging spectroscopy, Patterned sapphire substrate, Sapphire, Semiconductor lasers, Hybrid silicon lasers, Silicon photonics

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Driven by the strong need for cheap and integrable Si-based optoelectronic devices for a wide range of applications, continuing endeavors have been made to develop structures for light emission, modulation, and detection in this material system. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN/AlN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm^-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.

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