Mr. Jongseok Han Profile

Jongseok Han

at Seoul National Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 22 September 2015 Paper

Highly enhanced phosphorescent organic light-emitting diodes with cesium fluoride doped electron injection layer

Jongseok Han, Yongwon Kwon, Jiho Sohn, Changhee Lee

Proceedings Volume 9566, 95662E (2015) https://doi.org/10.1117/12.2187588

KEYWORDS: Doping, Organic light emitting diodes, Aluminum, Cesium, Resistance, Electron transport, Thin films, Photoemission spectroscopy, Electroluminescence, X-rays

Read Abstract +

We systematically investigate doping effect of cesium fluoride (CsF) on the device performance of organic light-emitting diodes (OLEDs). CsF can be used as a stable n-type dopant due to its low chemical reactivity and simple deposition process. We have observed that CsF could be employed as an effective n-type dopant in thin films of 3,3'-[5'- [3-(3-Pyridinyl)phenyl][1,1':3',1''-terphenyl]-3,3''-diyl]bispyridine (TmPyPB) through experimental studies of optical absorption spectroscopy, and X-ray photoelectron spectroscopy (XPS) with different doping concentration. In addition, we measured bulk resistance using impedance spectroscopy in an electron-only devices (EODs) with CsF-doped TmPyPB. As the doping ratio of the CsF increases, the current densities of EOD increase and the bulk resistances of the CsF-doped layer decrease. Owing to high electrical property of CsF-doped TmPyPB in EIL, green phosphorescent OLEDs showed significantly lower voltage and considerably enhanced efficiency. The device with 30 vol% CsF-doped TmPyPB showed power efficiency of 28.1 lm/W at 1000 cd/m2, whereas the device with pristine TmPyPB exhibited 13.8 lm/W. From these results, CsF-doped TmPyPB as EIL can reduce bulk resistance of EIL and improve the electron-injection and transport properties of electron-transport layer. Therefore, we can utilize CsF as an efficient n-type dopant in EIL of OLEDs.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years