The digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.
The Internet of Things (IoT) is a main driving force for research efforts in the area of low-cost electronics. Low-cost solutions for the upgrade of already existing everyday objects by sensors or RFID tags are needed. Key elements of such upgrading technologies are often thin-film transistors (TFTs). In this article we analysed the structurability of the commercially available, high-k dielectric ino® flex T3 by means of common used optical photolithographic techniques and wet-etching processes and its influence on the TFT performance. Furthermore, the impact of an alkanethiol treatment of the drain and source contacts on the charge carrier injection from the metal into the semiconducting layer was investigated. As active semiconductor a dithienothiophene (DTT) derivate was used.
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