Dr. Kurt G. Eyink Profile

Dr. Kurt G. Eyink

at Air Force Research Lab

SPIE Involvement:

Author | Editor

Proceedings Article | 10 October 2023 Poster + Paper

Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates

H. Haugan, A. Hilton, K. Mahalingam, A. Neal, S. Elhamri, R. Bedford, K. Eyink

Proceedings Volume 12687, 126870G (2023) https://doi.org/10.1117/12.2675731

KEYWORDS: Quantum wells, Antimony, Gallium arsenide, Gallium, Transmission electron microscopy, Quantum buffers, Interfaces, Gallium antimonide, Crystals, Aluminum

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Proceedings Article | 28 September 2023 Poster + Paper

Exploring transient modification of hyperbolic metamaterials using InAsSb-based semiconductor

Heather Haugan, Derek Bas, Augustine Urbas, Adam Neal, Kurt Eyink

Proceedings Volume 12657, 1265704 (2023) https://doi.org/10.1117/12.2676371

KEYWORDS: Gallium antimonide, Metals, Doping, Indium arsenide, Dielectrics, Hyperbolic metamaterials, Silicon, Antimony, Mid-IR, Semiconductors

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Proceedings Article | 3 October 2022 Presentation + Paper

Ultrafast phase transition to hyperbolic metamaterial state

Derek Bas, Heather Haugan, Kurt Eyink, Augustine Urbas

Proceedings Volume 12195, 121950G (2022) https://doi.org/10.1117/12.2633893

KEYWORDS: Gallium antimonide, Reflectivity, Picosecond phenomena, Metamaterials, Heterojunctions, Dielectrics, Ultrafast phenomena, Metals, Sensors, Signal detection

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Proceedings Article | 5 March 2021 Presentation

Nonlinear and hyperbolic metasurfaces and applications

Augustine Urbas, Ekaterina Poutrina, Derek Bas, Heather Haugan, Vitaliy Pustovit, Kurt Eyink

Proceedings Volume 11682, 1168210 (2021) https://doi.org/10.1117/12.2589199

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Proceedings Article | 17 September 2018 Presentation

A Van Hove singularity in the topology critical point of bilayer hyperbolic metamaterials (Conference Presentation)

Vitally Pustovit, David Zelmon, Kurt Eyink, Augustine Urbas

Proceedings Volume 10722, 107221A (2018) https://doi.org/10.1117/12.2321048

KEYWORDS: Metamaterials, Metals, Semiconductors

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SPIE Journal Paper | 31 March 2015

Estimate of the plasmonic enhancement for the erbium arsenide (metallic nanoparticle): indium arsenide (quantum dot) system

Frank Szmulowicz, Kurt Eyink

JNP, Vol. 9, Issue 01, 093078, (March 2015) https://doi.org/10.1117/12.10.1117/1.JNP.9.093078

KEYWORDS: Plasmonics, Absorption, Erbium, Indium arsenide, Surface plasmons, Nanoparticles, Quantum dots, Luminescence, Gallium arsenide, Dielectrics

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Proceedings Article | 11 June 2013 Paper

Thin-film, wide-angle, design-tunable, selective absorber from near UV to far infrared

Janardan Nath, Douglas Maukonen, Evan Smith, Pedro Figueiredo, Guy Zummo, Deep Panjwani, Robert Peale, Glenn Boreman, Justin Cleary, Kurt Eyink

Proceedings Volume 8704, 87041D (2013) https://doi.org/10.1117/12.2017958

KEYWORDS: Gold, Absorption, Silica, Dielectrics, Near ultraviolet, Reflectivity, Long wavelength infrared, Neodymium, Metamaterials, Thin films

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Proceedings Article | 19 November 2012 Paper

Mid- to long-wavelength infrared surface plasmon properties in doped zinc oxides

Justin Cleary, Michael Snure, Kevin Leedy, David Look, Kurt Eyink, Ashutosh Tiwari

Proceedings Volume 8545, 854504 (2012) https://doi.org/10.1117/12.974619

KEYWORDS: Zinc oxide, Plasmonics, Ellipsometry, Infrared radiation, Plasmons, Long wavelength infrared, Surface plasmons, Wave propagation, Dielectrics, Aluminum

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Proceedings Article | 21 January 2012 Paper

Quantitative strain analysis of interfaces in InAs/GaSb superlattices by aberration-corrected HAADF-STEM

K. Mahalingam, H. Haugan, G. Brown, K. Eyink, Bin Jiang

Proceedings Volume 8268, 826831 (2012) https://doi.org/10.1117/12.911914

KEYWORDS: Interfaces, Superlattices, Gallium antimonide, Scanning transmission electron microscopy, Transmission electron microscopy, Indium arsenide, Strain analysis, Fourier transforms, Analytical research, Image resolution

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Proceedings Article | 24 February 2010 Paper

Shape changes in patterned planar InAs as a function of thickness and temperature

K. Eyink, L. Grazulis, K. Mahalingam, M. Twyman, J. Shoaf, J. Hoelscher, C. Claflin, D. Tomich

Proceedings Volume 7610, 76100O (2010) https://doi.org/10.1117/12.845939

KEYWORDS: Indium arsenide, Quantum dots, Annealing, Directed self assembly, Metals, Optical lithography, Nanolithography, Gallium arsenide, Oxides, Atomic force microscopy

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Proceedings Article | 23 January 2010 Paper

Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy

K. Mahalingam, H. Haugan, G. Brown, K. Eyink, F. Szmulowicz, Bin Jiang, C. Kisielowski

Proceedings Volume 7608, 76081S (2010) https://doi.org/10.1117/12.841543

KEYWORDS: Interfaces, Transmission electron microscopy, Superlattices, Gallium antimonide, Chemical analysis, Indium arsenide, Statistical analysis, Image analysis, Monochromatic aberrations, Software development

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Proceedings Article | 14 February 2009 Paper

Morphological change in tip based nano-patterned planar InAs

K. Eyink, L. Grazulis, K. Mahalingam, J. Shoaf

Proceedings Volume 7224, 722408 (2009) https://doi.org/10.1117/12.810160

KEYWORDS: Indium arsenide, Quantum dots, Metals, Oxides, Annealing, Optical lithography, Atomic force microscopy, Gallium arsenide, Electronics, Analytical research

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Proceedings Article | 2 September 2008 Paper

Plasma enhanced chemical vapor deposition of high refractive index polymer films

Jesse Enlow, Hao Jiang, Kurt Eyink, John Grant, Weijie Su, Walter Johnson, Timothy Bunning

Proceedings Volume 7049, 70490T (2008) https://doi.org/10.1117/12.798152

KEYWORDS: Polymers, Refractive index, Polymer thin films, Photorefractive polymers, Plasma enhanced chemical vapor deposition, Plasma, Refraction, Thin films, Metals, Polymerization

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Proceedings Article | 22 February 2007 Paper

Photoluminescence study of self-assembly of heterojunction quantum dots (HeQuaDs)

Kurt Eyink, David Tomich, S. Munshi, Bruno Ulrich, Wally Rice, Lawrence Grazulis, J. Shank, Krishnamurthy Mahalingam

Proceedings Volume 6481, 64810O (2007) https://doi.org/10.1117/12.715304

KEYWORDS: Gallium antimonide, Indium arsenide, Luminescence, Gallium arsenide, Quantum dots, Electrons, Heterojunctions, Atomic force microscopy, Temperature metrology, Group III-V semiconductors

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Proceedings Article | 7 February 2006 Paper

Self-assembly of heterojunction quantum dots(HeQuaDs)

K. Eyink, D. Tomich, L. Grazulis, J. Pitz, K. Mahalingam, J. Shank, S. Munshi, B. Ulrich

Proceedings Volume 6129, 61290B (2006) https://doi.org/10.1117/12.647021

KEYWORDS: Indium arsenide, Gallium antimonide, Quantum dots, Gallium arsenide, Heterojunctions, Luminescence, Atomic force microscopy, Transmission electron microscopy, Oxides, Epitaxy

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