Mr. Manuel Härer Profile

Manuel Härer

at Hochschule Esslingen

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Proceedings Article | 3 March 2022 Presentation + Paper

Photocurrent spectroscopy of 850nm oxide-confined vertical-cavity surface-emitting lasers

A. Jaeger, M. Bou Sanayeh, H. Meinert, M. Härer, O. Yu. Makarov, I. Titkov, N. Ledentsov

Proceedings Volume 12020, 120200I (2022) https://doi.org/10.1117/12.2608674

KEYWORDS: Optical spectroscopy, Electro optics, Vertical cavity surface emitting lasers, Quantum wells, Excitons, Spectroscopes, Mirrors, Reflectivity, Absorption, Semiconductors, Nondestructive evaluation, Modulation

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Vertical-cavity surface-emitting lasers (VCSELs) are of utmost importance as key components for high-speed datacom, sensor and free-space applications. Therefore, for a successful further optimization of their performance, understanding their aging behavior is of crucial importance. Photocurrent spectroscopy (PCS) is a powerful, nondestructive technique which can be used to analyze semiconductor materials. Applying it on VCSELs makes it a powerful tool to investigate these tiny devices. In this work, we present room temperature high-resolution PCS analyses of fresh vs. aged 850 nm VCSELs. These VCSELs are characterized before and after aging by means of PCS, which measures essentially the convolution of the top mirror and intrinsic region absorption spectra. Heavy hole and light hole quantum well transitions are revealed and the related quantum-confined Stark effect is studied. The VCSELs used in this study are mounted on a standard V-connector and were intentionally aged at extreme conditions to accelerate their degradation till reaching optical damage. It was found that in these VCSELs, a reduced PCS current is observed, which is possibly caused by nonradiative recombination centers generated by the aging-related processes. Moreover, we observe that aging of the devices at very high current densities results in the evolution of defect related states, which modify the IV-curve under reverse bias. Degraded devices also show a systematic shift in breakdown voltage towards lower values, indicating a possible shrinkage of the undoped region by impurity electromigration and diffusion. Interestingly, these changes are minimal in stable devices that were aged under normal conditions.

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