Several distinct mechanisms of femtosecond laser ablation of thin Ag films from a silica substrate are established in large-scale atomistic simulations and are mapped to the space of film thickness and absorbed fluence. For a fixed film thickness, the increase in fluence results in sequential transitions from melting with no ejection of the film, to film splitting or spallation, to an explosive decomposition of the top part of the film and generation of a residual layer in the lower part of the ablation plume, and to a complete phase decomposition of the film into small droplets and vapor. To facilitate the experimental validation of the computational predictions, the variation of the scattering and reflectivity of the ablation plume is calculated from atomic configurations predicted in the simulations and related to the results of pump-probe optical imaging of the ablation plume.
This presentation summarizes recent work at the Laser Thermal Laboratory on the laser chemical processing of two-dimensional (2D) layered materials and the laser-aided atomic laser etching (ALEt) of semiconductors. Spatially selective laser doping of transition metal dichalcogenides (TMDCs), reversible writing of dopant patterns in graphene and fabrication of functional devices have been accomplished. Digital self-limited etching of semiconductors has been demonstrated.
This presentation summarizes recent work at the Laser Thermal Laboratory on the laser-aided processing and functionalization of two-dimensional (2D) layered materials and the laser chemical processing of semiconductors.
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