We propose a Verilog-A modeling concept for modern bulk and SOI FinFETs TID sensitivity modeling. The concept allows to model the fin width and length dependencies of TID sensitivity.
KEYWORDS: Monte Carlo methods, Ions, Transistors, Oxides, Silicon, X-rays, Information operations, Power supplies, Error analysis, Field programmable gate arrays
We study the Radiation-Induced Mismatch Enhancement (RIME) in 65 nm CMOS SRAM block designed for space applications. X-ray and heavy ion irradiation increase the number of non-rewriting cells.
The newest approach in the saturation fluorimetry of photosynthetic organisms by the
example of phytoplankton was developed. The theoretical model and the inverse problem of the
saturation fluorimetry are discussed. The results of evaluation of molecular photophysical
parameters of alga Chlorella pyrenoidosa under various stress factors, such as presence of DCMU
and Cu2+ ions are presented. The correlation between theese parameters and the parameters obtained
using Fluorescence Induction and Relaxation technique is discussed.
In this studies we used classical and laser methods for cyanobacteria diagnostics: Fluorescence
Induction and Relaxation and Non-Linear Laser Fluorimetry in order to obtain the whole set of
photophysical parameters of cyanobacteria.
Different photophysical processes that take place in photosynthetic apparatus of cyanobacterium
Synechocystis sp. PCC6803 were studied with mentioned above fluorescent methods and sets of
photophysical parameters were determined. The results allow us to suggest a model of photo
adaptation processes under excess irradiance (depending on light intensity and spectrum).
KEYWORDS: Transistors, Monte Carlo methods, Silicon, Oxides, Device simulation, CMOS technology, Data modeling, Circuit switching, Radiation effects, 3D modeling
Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was
embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard
SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.
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