Grating coupler, one of the essential devices in silicon-based optical integrated chip, is still suffering with low coupling efficiency and small operation bandwidth. In this paper, we design and experimentally demonstrate a silicon nitride (Si3N4) grating coupler with high coupling efficiency and large bandwidth. Instead of using bottom distributed Bragg reflector, metal mirror or other complex designs, a bottom silicon grating reflector based on a 220 nm industrially standard silicon-on-insulator wafer is employed to improve coupling efficiency and simplify the fabrication processes. The interlayer coupler enables the light transmission between Si3N4 and Si waveguides. By optimizing structure parameters and apodizing the Si3N4 grating coupler, a high coupling efficiency of -2.37 dB and large 1-dB bandwidth of 53 nm are obtained.
We propose and demonstrate a 3dB optical power splitter based on silicon on insulator (SOI) platform. Simulations results show that 50:50 split ratio for TE0 and TE1 modes can be achieved simultaneously by mode dispersion engineering. A compact size of 28.1μm can be achieved by introducing subwavelength gratings (SWG) structure. The proposed device can be utilized for multi-mode signal processing.
In this paper, we propose and demonstrate a mode insensitive micro-ring resonator which could process TE0 and TE1 modes simultaneously. The proposed device is composed of 90 ° modified Euler bend waveguide and deeply etched subwavelength grating (SWG) coupler. The curvature design of the Euler curve is smoother than that of the Bezier curve, thus reducing the size. The SWG waveguide can enhance the coupling effect by decreasing the refractive index difference between cladding and core compared to directional couplers and therefore it also reduces the size. Detail size of fabrication is performed, footprint is reduced by 46% to 170 μm. The proposed device could be utilized in advanced MDM transmission system.
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