Dr. Michael A. Reshchikov Profile

Dr. Michael A. Reshchikov

Professor at Virginia Commonwealth Univ

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Publications (12)

Proceedings Article | 21 March 2023 Presentation

Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN

Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Alireza Lanjani, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, F. Shadi Shahedipour-Sandvik

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2668384

KEYWORDS: Gallium nitride, Beryllium, Metalorganic chemical vapor deposition, Sapphire, Photoluminescence, Magnesium, Electrical conductivity, Dopants, Chemical vapor deposition

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Proceedings Article | 15 March 2023 Presentation + Paper

Photoluminescence from defects in GaN

M. Reshchikov

Proceedings Volume 12421, 1242109 (2023) https://doi.org/10.1117/12.2645878

KEYWORDS: Gallium nitride, Quenching, Photoluminescence, Photons, Luminescence

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Proceedings Article | 5 March 2022 Presentation

Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN

Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik

Proceedings Volume PC12001, PC120010B (2022) https://doi.org/10.1117/12.2626491

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Beryllium, Optoelectronics, Magnesium, Luminescence, Doping, Ultraviolet radiation, Toxicity, Optoelectronic devices

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Proceedings Article | 13 March 2015 Paper

Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence

M. Reshchikov, D. Demchenko, A. Usikov, H. Helava, Yu. Makarov

Proceedings Volume 9363, 93630L (2015) https://doi.org/10.1117/12.2077002

KEYWORDS: Gallium nitride, Luminescence, Electrons, Gallium, Selenium, Zinc, Ultraviolet radiation, Hydrogen, Carbon, Phonons

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Proceedings Article | 28 February 2012 Paper

Temperature dependent behavior of the SPV for n-type GaN

J. McNamara, M. Foussekis, H. Liu, H. Morkoç, M. Reshchikov, A. Baski

Proceedings Volume 8262, 826213 (2012) https://doi.org/10.1117/12.910289

KEYWORDS: Gallium nitride, Temperature metrology, Oxygen, Electrons, Ultraviolet radiation, Adsorption, Statistical modeling, Data modeling, Interfaces, Vapor phase epitaxy

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Proceedings Article | 4 March 2011 Paper

Kelvin probe measurements of p-type GaN

M. Foussekis, X. Ni, H. Morkoç, M. Reshchikov, A. Baski

Proceedings Volume 7939, 79390A (2011) https://doi.org/10.1117/12.876166

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Photons, Oxygen, Ultraviolet radiation, Statistical analysis, Adsorption, Vapor phase epitaxy, Chemical vapor deposition, Interfaces

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Proceedings Article | 4 March 2011 Paper

Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

H. Y. Liu, X. Li, S. Liu, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. Yankovich, A. Kvit, P. Voyles, M. Reshchikov, H. Morkoç

Proceedings Volume 7939, 79392E (2011) https://doi.org/10.1117/12.875515

KEYWORDS: Light emitting diodes, Oxygen, Surface roughness, Gallium nitride, Indium gallium nitride, Transmission electron microscopy, Electrodes, 3D metrology, External quantum efficiency, Transparent conducting oxide

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Proceedings Article | 20 March 2010 Paper

Effect of UV exposure on the surface charge behavior for GaN

M. Foussekis, J. Ferguson, X. Ni, H. Morkoç, M. Reshchikov, A. Baski

Proceedings Volume 7602, 76020Y (2010) https://doi.org/10.1117/12.843864

KEYWORDS: Ultraviolet radiation, Oxides, Gallium nitride, Oxygen, Atomic force microscopy, Gallium, Photoemission spectroscopy, Scanning probe microscopy, Microscopy, Data acquisition

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Proceedings Article | 16 February 2009 Paper

Effect of ambient on electrical and optical properties of GaN

M. Reshchikov, M. Foussekis, A. Baski, H. Morkoç

Proceedings Volume 7216, 721614 (2009) https://doi.org/10.1117/12.812258

KEYWORDS: Gallium nitride, Ultraviolet radiation, Electrons, Luminescence, Oxygen, Sapphire, Optical properties, Switching, Adsorption, Scanning probe microscopy

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Proceedings Article | 12 February 2009 Paper

Effect of thermal annealing on Cu-related green luminescence in ZnO

V. Avrutin, M. Reshchikov, N. Izyumskaya, R. Shimada, S. Novak, H. Morkoç

Proceedings Volume 7217, 72170X (2009) https://doi.org/10.1117/12.809477

KEYWORDS: Zinc oxide, Annealing, Copper, Thermal effects, Excitons, Luminescence, Aluminum, Temperature metrology, Quantum efficiency, Zinc

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Proceedings Article | 15 February 2008 Paper

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

J. Moore, M. Reshchikov, J. Ortiz, J. Xie, H. Morkoç, A. Baski

Proceedings Volume 6894, 68940B (2008) https://doi.org/10.1117/12.768041

KEYWORDS: Gallium nitride, Electrons, Interfaces, Ultraviolet radiation, Oxides, Metalorganic chemical vapor deposition, Atomic force microscopy, Microscopy, Semiconductors, Gallium

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Proceedings Article | 15 February 2008 Paper

Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE

V. Avrutin, M. Reshchikov, J. Nie, N. Izyumskaya, R. Shimada, Ü. Özgür, J. Foreman, H. Everitt, C. Litton, H. Morkoç

Proceedings Volume 6895, 68950Y (2008) https://doi.org/10.1117/12.764132

KEYWORDS: Ions, Zinc oxide, Sapphire, Plasma, Oxygen, Luminescence, Optical properties, Molecular beam epitaxy, Control systems, Excitons

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Showing 5 of 12 publications

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