Isik Kizilyalli, Robert Huang, D. Hwang, Brittin Kane, R. Ashton, S. Kuehne, X. Deng, Michael Twiford, E. Martin, D. Shuttleworth, K. Wittingham, S. Lytle, Yi Ma, Pradip Roy, Leonard Olmer, Hem Vaidya, F. Li, X. Li, Eric Persson, A. Massengale, L. Stirling, D. Chesire, K. Steiner, Rafael Barba, Morgan Thoma, William Cochran
In this paper a merged 2.5 V and 3.3 V high performance 0.25 micrometer CMOS technology is presented. Issues relevant to manufacturing, such as Leff control and the impact of plasma-assisted back-end dielectric depositions on gate oxide reliability and isolation, are discussed. This technology features a 50 angstrom gate oxide, high-energy implant scheme, n+-polysilicon gate, and 4/5 levels of metal. An improvement of 1.45X in circuit performance and 4X in packing density is achieved over our 0.35 micrometer CMOS technology. The nominal ring oscillator delay time is 38(39) ps for 3.3(2.5) V operation.
Submicron CMOS VLSI wafer product yield problems were correlated with a high p+ contact resistance in an Al/TiN/Ti/TiSi2/Si structure. Electrical measurements of contact resistance kelvin (non-interface) versus (interface) contact test structures were used to isolate the high resistance path. Secondary ion mass spectrometry (SIMS) analysis showed good correlation between the Ti to TiSi2 formation and different anneal conditions. The analysis also showed a strong relationship between TiSi2 formation and p+ surface concentration and junction depth. Deeper boron penetration into the silicon will occur with incomplete silicide penetration. The analytical data showed the changes in processing necessary to eliminate the resistance problem and achieve high dopant surface concentration and the desired junction depth.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.