Photonic device structures often require nano scale lithography techniques for their device fabrication. The techniques
are electron beam lithography and FIB(focused ion beam) pattering. Focused ion beam etching has been used as a
nanolithography tool for the creation of these nanostructures without mask. We obtain nano scale mesa patterns on
InGaN/GaN LED(light emitting diodes) wafer using focused ion beam and characterized. The InGaN/GaN LED wafer
was grown by molecular organic vapor deposition (MOCVD). To reduce the surface damage during FIB patterning, we
used a dielectric mask layer and wet etching to eliminate re-deposition of sputtering materials and Ga+ ion implantations
and ion damage layer during FIB patterning, and finally, removed SiO2 with wet etching. A metal thin layer was
deposited by an ion beam sputter to avoid charging effects during FIB patterning. We obtain a 2-Dimensional patterning
for the fabrication of the high brightness LEDs. This FIB pattering technique can be applied to nanofabrication
optoelectronic devices.
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