Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the
optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/
(NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray
photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical
nature of the impurities giving rise to bound exciton recombination in InAs (111). Band–to-band transitions have been
observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and
to sulphur (at 0.414 eV), have been detected after treatment.
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