We show by numerical modelling how geometrical parameters of a NW and Si-WG design influence the spontaneous emission enhancement of the QD emitter and the in-coupling efficiencies at the NW-WG interface. First experiments towards the development of an integrated III-V NW-QD system are then presented. Here, we demonstrate a droplet-free site-selective epitaxy of vertical-cavity NW waveguides, where good control of GaAsSb/InGaAs axial heterostructures and their distinct luminescence properties are demonstrated. We also discuss control of Indium incorporation into the InGaAs axial segment, to tune the emission wavelength before optimizing the axial size, progressing towards an axial QD.
We design a Quantum Dot (QD) embedded in a vertical-cavity photonic nanowire (NW), deterministically integrated on a silicon-on-insulator (SOI) waveguide (WG), as a novel quantum light source in a quantum photonic integrated circuit (QPIC). Using a broadband QD emitter, we perform finite-difference time domain simulations to systematically tune key geometrical parameters and explore the coupling mechanisms of the emission, to the NW and WG modes. We find distinct Fabry-Perot resonances in the Purcell enhanced emission that govern the outcoupled power into the fundamental TE mode of the SOI-WG. With an optimized geometry that places the QD emitter in a finite NW in close proximity to the WG, we obtain peak outcoupling efficiencies for polarized emission as high as eighty percent.
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