In this talk, we demonstrate a black phosphorus/molybdenum ditelluride heterostructure photodetector, integrated with a silicon-on insulator (SOI) waveguide. The performed heterostructure photodetector exhibits high responsivity in the midinfrared spectral region. Moreover, our developed hybrid detector can exhibit ultrafast rise and fall time. Such features suggest its usefulness to real-time on-chip sensing applications.
In this talk, we will demonstrate a heterostructure that consists of two graphene layers, a bulk BP and a 18 nm-thick hBN. The maximum responsivity reaches 1.43 A/W (corresponding to EQE of 52%) at wavelength of 3.4 μm, and the overall efficiency, from visible to MIR, can exceed 20%. Additionally, the performed photodetector can exhibit ultrafast rise and fall times (< 2 ns), and the switching behavior of photodetector is highly reproducible as confirmed by the eye diagram measurement with the data rate at 250 Mbits/s. Finally, we examine the capability of MIR imaging of our detector. The acquired images exhibit high sharpness and contrast even under low light intensity illumination and fast scanning conditions.
In this paper, we will outline the architectures of photodetectors and light emitting diodes based on the van der Waals heterostructures. For the demonstrated photodetectors, we will show that they not only can exhibit the features of linear-dichroic, broadband and fast (> 200 MHz) photodetections at room temperature, but also can be useful for mid-infrared imaging applications. Regarding to the light emitters, we will show that the vdW-based light emitting diodes are applicable to the visible spectral region. In addition, the demonstrated vdW light emitting diodes can be further integrated with photonic crystal cavities, and the integration would significantly enhance the efficiency of light emission and lead to the high degree of linear polarized electroluminescence.
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