Mr. Qi Chen Profile

Qi Chen

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Proceedings Article | 22 January 2007 Paper

Fabrication and characterization of SiO2 microcantilever for high sensitive moisture sensor

Qi Chen, Ji Fang, Hai-Feng Ji, Kody Varahraman

Proceedings Volume 6465, 64650H (2007) https://doi.org/10.1117/12.705954

KEYWORDS: Silicon, Etching, Sensors, Semiconducting wafers, Photoresist materials, Photomasks, Dry etching, Anisotropic etching, Isotropic etching, Plasma etching

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μThis paper reports a novel design of SiO₂ microcantilever for high sensitivity sensor platform. In order to fabricate this device, a new fabrication process using isotropic combined with anisotropic dry etching to release the SiO₂ microcantilever beam by ICP (Inductively Coupled Plasma) was developed and investigated. This new process not only obtains a high etch rate at 9.1 &mgr;m per minute, but also provides a good profile controllability, and a flexibility of device design. To compare the SiO₂ and Si cantilever beam, the results of simulation and theoretical analysis are given. The results predict the SiO₂ cantilever can achieve a higher sensitivity than the Si cantilever. The SiO₂ cantilever beams with 1 &mgr;m thickness, 100 &mgr;m width, and 250 &mgr;m length were fabricated and tested by exposing it to aminoethanethiol solution of low concentration. The experimental data support the prediction derived from the simulation results. The moisture sensor based on the surface modified cantilever beam showed a good response to one percentage relative humidity.

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