The depletion of natural resources today necessitates a reevaluation of technological development, considering both material abundance and energy-efficient processes while maintaining device efficiency. In this context, SrSnO3 emerges as a superior candidate, this material's abundance, non-toxicity, and cost-effectiveness, along with the tunable bandgap, the stability and durability underscore its potential in developing environmentally friendly and sustainable UV technologies.
In this research, The synthesis of homogeneous, green, crack-free SrSnO3 thin films using sol-gel was achieved. XRD measurements confirmed the purity of the perovskite phase. The films presented 80% of transparency in the visible range with a UV absorption around 300nm. The efficiency of the material was further explored by layering the doped perovskite on Silcon to create a hybrid device and initial electrical properties will be discussed.
This work contributes to the ongoing efforts to develop sustainable and efficient materials for UV optoelectronic devices and underscores the pivotal role of advanced material synthesis techniques in achieving this goal.
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