Mr. Rajat Gujrati Profile

Rajat Gujrati

at Georgia Tech-Lorraine

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Author

Publications (3)

Proceedings Article | 21 March 2023 Presentation

Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Adama Mballo, Rajat Gujrat, Ashutosh Srivastava, Jean-Paul Salvestrini, Paul Voss, Gilles Patriarche

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2654225

KEYWORDS: Light emitting diodes, Heterojunctions, Silicon, Semiconductors, Quartz, Metalorganic chemical vapor deposition, Gallium nitride, Epitaxy, Chemical vapor deposition, Boron

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Proceedings Article | 16 March 2023 Presentation + Paper

Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination

A. Perepeliuc, R. Gujrati, A. Srivastava, P. Vuong, V. Ottapilakkal, P. Voss, S. Sundaram, J. Salvestrini, A. Ougazzaden

Proceedings Volume 12422, 124220H (2023) https://doi.org/10.1117/12.2662309

KEYWORDS: Light sources and illumination, Boron nitride, Electrical conductivity, Semiconductors, Photocurrent, Ultraviolet radiation, Laser irradiation

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Proceedings Article | 5 March 2021 Presentation

Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Paul Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

Proceedings Volume 11686, 1168619 (2021) https://doi.org/10.1117/12.2577275

KEYWORDS: Light emitting diodes, Boron, Heterojunctions, Sapphire, Optoelectronic devices, New and emerging technologies, Measurement devices, Materials processing, Material characterization, 3D metrology

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