Next generation photolithography stepper tools will operate at 157 nm and require robust solid state photodetectors to ensure efficient operation and facilitate direct beam monitoring for photoresist dosimetry. There is currently no commercial detector system able to fully meet all the demanding requirements of this application. Diamond has a band gap of 5.5 eV. This implies that detectors fabricated from this material may be intrinsically visible blind and radiation hard. In this paper the results of the first study to assess the viability of the use of thin film polycrystalline diamond photodetectors for use in 157 nm F2-He based laser lithography tools are presented. Co- planar interdigitated electrode structures were fabricated on free standing polycrystalline diamond to realise photoconductive devices. These were exposed to pulses from an F2-He laser in the fluence range 0 - 1.4 mJcm-2. The electrical and optical characteristics of the devices have been measured and are compared to the response of a standard vacuum photodiode. The diamond devices appear to be ideally suited for use at 157 nm in lithography applications.
Many laser-based applications require a robust and sensitive deep UV photodetector, properties not offered by existing solid state devices which are based on silicon. Thin film CVD diamond offers a solution to this problem, but careful device design and passivation of defects within the diamond are required before this material can be used to fabricate high performance devices. This paper reviews the optoelectronic properties of diamond films, considers how they may be modified and surveys the current state-of-the- art in diamond photodetector technology.
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