We consider the results of dielectric properties study in millimeter band of thin-films based on silicon nitride compositions. Silicon nitride thin-film coatings were deposited on a substrate by DC magnetron sputtering. As a substrate for silicon nitride thin-film coatings a quartz plate were utilized. The ratio of argon and nitrogen in the working gas mixture was chosen as the variable parameter to control the composition of the deposited thin-film coating. Several samples of silicon nitride thin-film coatings with about 1 um thickness were fabricated. Radiophysical and dielectric properties of the fabricated SiN-type thin-film coatings were studied in millimeter wave frequency band of 50-70 GHz (V-band) with help of free space measurement method. The obtained results have shown that by controlling the resistive thin-film coating composition one can only slightly vary the radiophysical and dielectric properties of coating in millimeter-band.
We consider the results of modern scientific literature review on the experience and possibilities of using resistive thinfilm layers in vacuum electron devices (resistive wall amplifier). Such thin-film layers can be used as analogue of conventional slow wave structures in vacuum microwave amplifiers. The disadvantages of conventional slow wave structures in millimeter and submillimeter wavelength ranges are discussed. The main advantages and features of resistive thin-film layers, which could be serve as slow wave structures in amplifying devices of vacuum microwave electronics of millimeter and submillimeter wavelength range, are revealed. The proposed review covers the period from 1953, when the idea of a resistive wall amplifier was first introduced, to 2018. It was shown that the majority of literature consist only theoretical results, only a few papers consider the experimental results. Also it is noted that the focus of modern study shifts to the using of metamaterials as a resistive thin-film layer, very promising theoretical results and some cold measurements were obtained only in the GHz region.
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