Mr. Takuya Kuroda Profile

Takuya Kuroda

at SCREEN SPE USA LLC

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Author

Publications (3)

Proceedings Article | 26 March 2019 Presentation + Paper

LCDU improvement of EUV-patterned vias with DSA

Jing Guo, Dustin Janes, Yann Mignot, Richard Johnson, Cheng Chi, Chi-Chun Liu, Luciana Meli, Takuya Kuroda, Domenico DiPaola, Yuji Tanaka, Harumoto Masahiko, Nelson Felix, Daniel Corliss

Proceedings Volume 10958, 109580N (2019) https://doi.org/10.1117/12.2515153

KEYWORDS: Polymethylmethacrylate, Optical lithography, Extreme ultraviolet lithography, Critical dimension metrology, Etching, Chemistry, Ultraviolet radiation, Defect inspection, Extreme ultraviolet, Polymers

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Lithographic and pitch-multiplying spacer technologies are widely used to shrink interconnect periodicity within critical layers. This places significant burden on overlay and CD uniformity of the subsequently patterned vias to physically contact and electrically connect critical layers to the rest of the integrated circuit in a nearly defect-free and perfectly-consistent manner. We are evaluating the combination of EUV and DSA patterning technologies to meet this challenge and enable future technology nodes. The contact hole guide pattern is fabricated atop bilayer hardmask material by single-exposure EUV, surface-modified with telechelic polymer brush materials, and finally shrunk/rectified using self-assembled, lamella-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA). The nascent via pattern is then blanket exposed by DUV light and the photolyzed PMMA is selectively rinsed away. Here we study the process performance of DSA pattern wet etch chemistry and subsequent dry etch pattern transfer into bilayer hardmask material using both metrology and electrical yield measurements as evaluation criteria. In particular, the choice of wet etch solvation strength selective towards PMMA was varied from moderate (isopropanol, IPA) to good (acetic acid, AAc). Due to the ability of AAC to solubilize all covalently-untethered PMMA, regardless of molecular weight, the resulting average CD is wider and its local distribution is more uniform. In contrast, IPA is only capable of rinsing away the smallest PMMA fragments, resulting in relatively tighter bounds about the preferable blanket UV dose, and a smaller average CD and less-uniform local CD distribution. These morphological differences are confirmed by cross-sectional transmission electron micrographs. Brightfield inspection and inline electrical testing are used to compare relative defectivity and yield, respectively, to assess the potential impact on device performance for processes utilizing either solvent.

Proceedings Article | 24 March 2017 Presentation + Paper

450mm lithography status for high volume manufacturing

Christopher Carr, Hsin-Hui Huang, HyoungKook Kim, Shannon Dunn, Jasper Munson, Russell Black, Preston Crupe, Victor Perez, Takuya Kuroda

Proceedings Volume 10147, 101470C (2017) https://doi.org/10.1117/12.2257633

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Overlay metrology, Back end of line, 193nm lithography, High volume manufacturing, Manufacturing, Scanners, Metals, Source mask optimization, Atrial fibrillation, Photoresist processing, Silicon

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The Global 450mm Consortium (G450C), which is located at the SUNY Poly campus in Albany, NY was created to develop and evaluate a manufacturing tool set for 450mm wafers. The Lithography cell at G450C consists of a Nikon NSR-S650D 193nm immersion scanner and a SCREEN SOKUDO DUO DT-4000 track. The Lithography cell was installed and qualified in 2015, and with over a year of tool availability we have been able to perform extensive testing on the system to determine the equipment readiness for volume manufacturing. For the purposes of this paper we are focusing on the Edge Placement Error (EPE) [1] contributors of Critical Dimension Uniformity (CDU) and Overlay [2]. We will show the initial results as well as the improvements that have been made since tool acceptance. The 450mm results will be compared to 300mm tools in production today, as well as against the seven nanometer node (N7) expected requirements. Lastly, we plan to demonstrate the Nikon scanner’s ability for focus control on stressed or bowed wafers, which are characteristic challenges of large silicon substrates. This paper will showcase the current 450mm lithography performance for CDU on both Line/Space (LS) and Contact Hole (CH) patterns. We will demonstrate the process window for LS and CH features on multiple resists specially formulated for 450mm. Both Post Exposure Bake (PEB) tuning on the SCREEN track as well as CDU Master (CDUM) Corrections from the Nikon Turnkey Solution software suite will be utilized for performance improvements on 450mm wafers. The G450C goal is to drive CDU down to less than 1nm 3σ across the entire wafer with 1.5mm edge exclusion zone.” In addition to our test masks, G450C has designed a three layer mask set and with these masks we gathered “on product” CDU performance on a Back End Of Line (BEOL) metal stack. In the current reality of high volume manufacturing, multi-patterning is used to achieve the required Critical Dimension (CD) and pitch combination. The largest contributor to EPE is scanner overlay performance. We will demonstrate the Single Machine Overlay (SMO) performance as well as some Mix and Match Overlay (MMO) results. The lithography cell at G450C is the only 450mm linked lithography cell in the world. In order to create MMO wafers we were required to expose the first print at the Nikon factory in Japan and etch them at G450C to generate an align-to layer. As the wafers’ size scales, so do some of the process effects including film stress and wafer bow. The current G450C BEOL integrated process has measured wafer bow of up to 350um. We will demonstrate how the S650D measures the wafer topography and adjusts the exposure to compensate for wafer bow.

Proceedings Article | 24 March 2017 Presentation + Paper

Immersion lithography scanner resolution performance demonstration on 450mm substrates

Christopher Carr, Hsin-Hui Huang, HyoungKook Kim, Shannon Dunn, Jasper Munson, Russell Black, Preston Crupe, Victor Perez, Takuya Kuroda

Proceedings Volume 10147, 101471B (2017) https://doi.org/10.1117/12.2257642

KEYWORDS: Photomasks, Lithography, 193nm lithography, Photoresist materials, Semiconducting wafers, Scanners, Manufacturing, Manufacturing equipment, Photoresist processing, Back end of line, Critical dimension metrology, Acquisition tracking and pointing, Optical proximity correction

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