We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The
growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface
between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the
need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions
directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs
substrates.
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