Backside transient interferometric mapping method is a useful tool for ns-resolution imaging of transient changes in
heat energy and free carrier concentration in semiconductor devices during high-energy electrical pulses. In this
contribution we investigate the sources of errors in the extracted phase, which are specific to the spatial phase and
reflectivity profile of the semiconductor device structure and to the used FFT extraction method. We show that the
phase and reflectivity profile of the sample related to the structure of the top layers causes undulations in the phase, thus
decreasing the phase extraction precision. To minimize the undulations, an optimal spectrum filter for the FFT method
is proposed. In addition, the noise and fringe discontinuities are found to result in defects in the phase profile. In order to
isolate these defects time efficiently, a pre-processing of the wrapped phase image is proposed. It effectively reduces the
requirement for the unwrapping to a small region. The path independent method or the pixel-queue algorithm is then
used for the unwrapping, which do not allow spreading of the defects. The findings are used to make a full-automated
evaluation of the phase images.
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