Dr. Ying Yang Profile

Dr. Ying Yang

Associated professor at Northwest Univ

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Proceedings Article | 5 September 2015 Paper

Effect of potential on the conductivity of electrodeposited Cu2O film

Ying Yang, Juan Han, Xiaohui Ning, Hongsheng Tang

Proceedings Volume 9560, 95600W (2015) https://doi.org/10.1117/12.2189800

KEYWORDS: Copper, Ions, Electrodes, Diffusion, Oxygen, Transparent conductors, Plating, Molecules, P-type semiconductors, N-type semiconductors

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The conductivity (i.e., n-type or p-type) of Cu₂O films is controlled by the electrodeposition potential. A slightly acidic solution (pH 4.93) containing cupric acetate and sodium dodecyl sulfate (SDS) is used. Photoelectrochemical measurements at zero bias indicate that the Cu₂O films deposited at the potentials of 0.00 V and -0.05 V generate the ntype photocurrents and the films deposited at the potentials negative than -0.10 V generate the p-type photocurrents. The X-ray diffraction (XRD) results show that the n-type films are pure Cu₂O, however, the metallic copper appear in the ptype Cu₂O films. Mott-Schottky measurements show that the donor concentrations of the n-type Cu₂O films decrease and the acceptor concentrations of the p-type Cu₂O films increase with the decrease of the deposition potential. The SDS molecules adsorbed on electrode surface and the SDS micelles block the diffusion of Cu²⁺ ions, resulting in a low diffusion rate of Cu²⁺ ions. Under this circumstance, the growth of Cu₂O films are affected significantly by the overpotential. When the potential is positive than -0.05 V, oxygen vacancies are formed in the films leading to the n-type conductivity; however, when the potential is negative than -0.10 V, the Cu²⁺ ions are reduced to Cu⁺ rapidly and part of Cu²⁺ are reduced to metallic copper, the diffused Cu²⁺ ions to supply to the growth of Cu₂O films are insufficient, hence copper vacancies are formed in the films resulting in the p-type conductivity.

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