Gas sensors have been widely used for different applications including chemical detection, quality assurance, environmental monitoring and medical diagnostics. Optical gas sensors exhibit higher sensitivity and wider dynamic range than their electrical counterparts. This work demonstrates a novel design for a gas sensor based on conventional Silicon-on-insulator (SOI) platform. The sensor design is based on interferometer working in the near-infrared (NIR) region where directional couplers were used in splitting and combining the input power to and from the two arms of the interferometer with 50/50 splitting ratio at 1550nm. Slot-waveguide is used in the sensing arm of the interferometer and strip-to-slot and slot-to-stip converters with high coupling efficiency were used for transforming the optical mode. Finite difference eigenmode (FDE) solver was used to calculate its mode field profiles, effective index, and loss to optimize the waveguide dimensions and to achieve a waveguide sensitivity of 0.7 at 1550nm for 220nm silicon thickness. Three-dimensional finite-dif-ference-time-domain (3D-FDTD) method was used in the analysis and optimization of the proposed gas sensor. Results show significant improvement in the figure-of-merit (FOM) and reduction of device area. The sensor also exhibits low insertion loss (IL) leading to a low detection limit. The proposed sensor is easily fabricated using CMOS technology which is essential for mass-scale fabrication, and thus a low-cost sensor can be integrated with optical fiber communication systems and optoelectronic systems. Therefore, the proposed sensor has the potential to be a key component in lab-on-a-chip (LOC) systems.
Interferometers are one of the basic devices in many photonics applications. Interferometers can be used in the design of optical filters, wavelength de-multiplexing (WDM), electro-optical modulators and optical sensors. They can also form the building block of optical digital signal processor (DSP). In this work, we propose novel integrated Michelson interferometer based on the Silicon on Insulator (SOI) technology with 220nm silicon device layer and working in the near infrared region. The Interferometer consists of input splitter directional coupler, two waveguide arms and directional coupler combiner with loop reflector. The interferometer transfer function and its parameters including the free spectral range (FSR), the full width half maximum (FWHM) and sensitivity were derived analytically. Using our proposed interferometer instead of the conventional Mach Zehnder Interferometer (MZI) as optical filter, electro-optical modulator or sensor will reduce the size of the device needed by a factor of two while achieving the same performance. Here, we use our Michelson Interferometer with four different path length differences resulting in FSR from 0.8nm to 6.4nm. A strip waveguide with 500nm width platform is used. These devices are suitable for optical filtering as well as wavelength de-multiplexing WDM applications. The simulation results of the proposed designs are extracted using Lumerical MODE and INTERCONNECT software tools that use scattering matrices of optical components to determine the transfer function of photonic integrated circuits (PICs). The designs were verified with three-dimensional finite-difference-time-domain (3D-FDTD) solver and show good agreement. Finally, the designs were fabricated using Electron Beam Lithography (EBL) and characterized showing also good matching with the numerical simulations results.
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