Low dark current p-on-n technology for space applications

N. Péré-Laperne; N. Baier; C. Cervera; J. L. Santailler; C. Lobre; C. Cassillo; J. Berthoz; V. Destefanis; D. Sam Giao; A. Lamoure

doi:10.1117/12.2275359

30 August 2017 Low dark current p-on-n technology for space applications

N. Péré-Laperne, N. Baier, C. Cervera, J. L. Santailler, C. Lobre, C. Cassillo, J. Berthoz, V. Destefanis, D. Sam Giao, A. Lamoure

Author Affiliations +

Proceedings Volume 10404, Infrared Sensors, Devices, and Applications VII; 104040G (2017) https://doi.org/10.1117/12.2275359
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

Space applications are requiring low dark current in the long wave infrared at low operating temperature for low flux observation. The applications envisioned with this type of specification are namely scientific and planetary missions. Within the framework of the joint laboratory between Sofradir and the CEA-LETI, a specific development of a TV format focal plane array with a cut-off wavelength of 12.5μm at 40K has been carried out. For this application, the p on n technology has been used. It is based on an In doped HgCdTe absorbing material grown by Liquid Phase Epitaxy (LPE) and an As implanted junction area. This architecture allows decreasing both dark current and series resistance compared to the legacy n on p technology based on Hg vacancies. In this paper, the technological improvements are briefly described. These technological tunings led to a 35% decrease of dark current in the diffusion regime. CEA-LETI and Sofradir demonstrated the ability to use the p on n technology with a long cutoff wavelength in the infrared range.

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Citation Download Citation

N. Péré-Laperne, N. Baier, C. Cervera, J. L. Santailler, C. Lobre, C. Cassillo, J. Berthoz, V. Destefanis, D. Sam Giao, and A. Lamoure "Low dark current p-on-n technology for space applications", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 104040G (30 August 2017); https://doi.org/10.1117/12.2275359

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