Degradation physics of GaN-based lateral and vertical devices

Matteo Meneghini; Carlo De Santi; Alessandro Barbato; Matteo Borga; Eleonora Canato; Francesca Chiocchetta; Elena Fabris; Fabrizio Masin; Arianna Nardo; Fabiana Rampazzo; Maria Ruzzarin; Alaleh Tajalli; Marco Barbato; Gaudenzio Meneghesso; Enrico Zanoni

doi:10.1117/12.2511145

1 March 2019 Degradation physics of GaN-based lateral and vertical devices

Matteo Meneghini, Carlo De Santi, Alessandro Barbato, Matteo Borga, Eleonora Canato, Francesca Chiocchetta, Elena Fabris, Fabrizio Masin, Arianna Nardo, Fabiana Rampazzo, Maria Ruzzarin, Alaleh Tajalli, Marco Barbato, Gaudenzio Meneghesso, Enrico Zanoni

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Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 1091817 (2019) https://doi.org/10.1117/12.2511145
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

This paper reviews the most relevant mechanisms responsible for the degradation of GaN-based lateral and vertical electron devices. These components are almost ideal for application in power electronics, but the presence of semiconductor defects and the existence of degradation processes may limit their stability and lifetime. In this paper we focus on the following aspects: (i) the degradation processes induced by off-state conditions and leading to a time-dependent and/or catastrophic breakdown of the devices; (ii) the stability of the gate stack; (iii) the degradation of the electrical performance of vertical GaN transistors and diodes. To discuss these topics, we refer to case studies carried out in our laboratories.

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Matteo Meneghini, Carlo De Santi, Alessandro Barbato, Matteo Borga, Eleonora Canato, Francesca Chiocchetta, Elena Fabris, Fabrizio Masin, Arianna Nardo, Fabiana Rampazzo, Maria Ruzzarin, Alaleh Tajalli, Marco Barbato, Gaudenzio Meneghesso, and Enrico Zanoni "Degradation physics of GaN-based lateral and vertical devices", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091817 (1 March 2019); https://doi.org/10.1117/12.2511145

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