HfSiOx-gate GaN MOS-HEMTs for RF power transistor

Tamotsu Hashizume; Ryota Ochi; Erika Maeda; Toshihide Nabatame; Koji Shiozaki; Taketomo Sato

doi:10.1117/12.2577403

5 March 2021 HfSiO_x-gate GaN MOS-HEMTs for RF power transistor

Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168628 (2021) https://doi.org/10.1117/12.2577403
Event: SPIE OPTO, 2021, Online Only

Abstract

We have investigated AlGaN/GaN high-electron mobility transistors (HEMTs) with a high κ gate dielectric using hafnium silicate (HfSiO_x). The (HfO₂)/(SiO₂) laminate structure was deposited on the AlGaN surface by a plasma enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiO_x-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/ decade. In addition, we observed excellent capacitance-voltage (C-V) characteristics with negligible frequency dispersion in the metal-oxide-semiconductor (MOS) HEMT diode. The detailed C-V analysis showed low state densities in the order of 10¹¹ cm^-2 eV^-1 at the HfSiO_x/AlGaN interface.

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Citation Download Citation

Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, and Taketomo Sato "HfSiO_x-gate GaN MOS-HEMTs for RF power transistor", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168628 (5 March 2021); https://doi.org/10.1117/12.2577403

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