Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon; Marleen Van Hove; Brice De Jaeger; Niels Posthuma; Dirk Wellekens; Shuzhen You; Xuanwu Kang; Tian-Li Wu; Maarten Willems; Steve Stoffels; Stefaan Decoutere

doi:10.1117/12.2077806

13 March 2015 Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, Stefaan Decoutere

Author Affiliations +

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 936311 (2015) https://doi.org/10.1117/12.2077806
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is “normally-on” or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro’s and con’s as well as their critical process steps.

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Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, and Stefaan Decoutere "Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936311 (13 March 2015); https://doi.org/10.1117/12.2077806

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