Reutilization of CdZnTe substrate technology for HgCdTe   IRFPA detector

Chunling Li; Qian Li

doi:10.1117/12.2579658

5 November 2020 Reutilization of CdZnTe substrate technology for HgCdTe IRFPA detector

Chunling Li, Qian Li

Proceedings Volume 11563, AOPC 2020: Infrared Device and Infrared Technology; 115630B (2020) https://doi.org/10.1117/12.2579658
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

Mercury cadmium telluride (HgCdTe) grown by liquid phase epitaxy (LPE) demonstrates superior performance in the infrared imaging applications. The HgCdTe devices are fabricated by depositing an epitaxial layer of HgCdTe on cadmium zinc telluride (CdZnTe or CZT) substrates via LPE. This LPE growth requires high-quality substrates. However, it is difficult to manufacture and polish epi-ready substrates for the LPE growth of II-VI semiconductors, especially for HgCdTe. This leads to very high cost and limits development of systems based on LPE-grown HgCdTe films. For very large two-dimensional components, thermal expansion between HgCdTe and the silicon should be considered. For these components, the CdZnTe substrates of the detector chips are thinned by polishing and chemical etch technology, and removed totally to spread the stress between the HgCdTe layers and the Indium bumps. Therefore, the high-cost CdZnTe substrates could only be used once using the traditional fabrication process. In this paper, we present a reutilization process for CdZnTe substrate. Our results demonstrate the device prepared by HgCdTe film using repolished CdZnTe substrates has good property. We could produce more chips from one CdZnTe substrate with enough thickness. This method enable the reuse of the CdZnTe substrates and significantly decreases the cost of the device.

Citation Download Citation

Chunling Li and Qian Li "Reutilization of CdZnTe substrate technology for HgCdTe IRFPA detector", Proc. SPIE 11563, AOPC 2020: Infrared Device and Infrared Technology, 115630B (5 November 2020); https://doi.org/10.1117/12.2579658

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KEYWORDS

Mercury cadmium telluride

Polishing

Infrared radiation

Liquid phase epitaxy

Surface finishing

Chemical mechanical planarization

Staring arrays

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