High-efficiency vertically-emitting chipsets for 3D and proximity sensing

K. Nechay; R. Ulkuniemi; A. Filipchuk; T. Hartikainen; V. Kaivosoja; R. Hietikko; J. Nikkinen; J. Sillanpaa; P. Melanen; V. Vilokkinen; S. Talmila; P. Uusimaa

doi:10.1117/12.2577229

5 March 2021 High-efficiency vertically-emitting chipsets for 3D and proximity sensing

K. Nechay, R. Ulkuniemi, A. Filipchuk, T. Hartikainen, V. Kaivosoja, R. Hietikko, J. Nikkinen, J. Sillanpaa, P. Melanen, V. Vilokkinen, S. Talmila, P. Uusimaa

Author Affiliations +

Proceedings Volume 11668, High-Power Diode Laser Technology XIX; 116680R (2021) https://doi.org/10.1117/12.2577229
Event: SPIE LASE, 2021, Online Only

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) have just recently started generating a lot of interest as the illumination source in the multitude of commercial applications. VCSELs capability to provide narrow spectrum emission with low temperature sensitivity and high beam quality, coupled with the possibility of nanosecond pulses generation, makes VCSELs an excellent laser platform for the outdoors, high-precision time-of-flight (ToF) and structured light applications. These advantageous features of VCSELs emission arise from their vertical cavity geometry, which also enables possible VCSELs direct integration onto circuitry and allows power scaling by arranging single-emitting VCSELs into compact high-power 2D arrays. These benefits have made VCSEL the current most popular illumination source for the 3D sensing applications both in the consumer market (e.g. proximity sensors for face and gesture recognition) as well as in the industrial sector (e.g. automotive short- to middle-range LiDAR and in-cabin monitoring). We present development results of both high-efficiency VCSEL single-emitters and multi-Watt VCSEL arrays emitting at the 940 nm purposed for 3D sensing applications. The VCSEL development involved optimization of epitaxial design in terms of DBR doping concentrations and the material content of the bottom DBR and oxide layer. While, on the other hand, optimization of the device parameters and processes targeted oxide aperture and mesa diameters, as well as etching depth. Wet thermal oxidation process has been specifically developed to facilitate precise oxidation depth control, run-torun reproducibility, and uniformity on the wafer scale. Successful VCSEL development is attributed to the Modulight’s full-cycle in-house semiconductor fabrication capabilities.

Conference Presentation

Citation Download Citation

K. Nechay, R. Ulkuniemi, A. Filipchuk, T. Hartikainen, V. Kaivosoja, R. Hietikko, J. Nikkinen, J. Sillanpaa, P. Melanen, V. Vilokkinen, S. Talmila, and P. Uusimaa "High-efficiency vertically-emitting chipsets for 3D and proximity sensing", Proc. SPIE 11668, High-Power Diode Laser Technology XIX, 116680R (5 March 2021); https://doi.org/10.1117/12.2577229

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available