Presentation
5 March 2021 Silicon laser dicing with picosecond pulses at 2-µm wavelength
Author Affiliations +
Abstract
We present a picosecond-laser-based modification process within the bulk of silicon at 2-µm wavelength. For optimizing the process to reliably generate defined modifications, different pulse durations in the span from femtoseconds to picoseconds and different focusing conditions at different depths in silicon were investigated. A predetermined cleavage plane was realized by transversal scanning. The force required to break the sample at the desired position was analyzed for the different processing conditions. Overall our results constitute the basis for picosecond-laser-based dicing of silicon.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Blothe, Maxime Chambonneau, Tobias Heuermann, Martin Gebhardt, Jens Limpert, and Stefan Nolte "Silicon laser dicing with picosecond pulses at 2-µm wavelength", Proc. SPIE 11673, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI, 116730L (5 March 2021); https://doi.org/10.1117/12.2579333
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KEYWORDS
Silicon

Picosecond phenomena

Semiconductor lasers

Semiconducting wafers

Laser development

Femtosecond phenomena

Fiber lasers

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