DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors

Kai Ding; Vitaliy Avrutin; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç; Emilis Šermukšnis; Arvydas Matulionis

doi:10.1117/12.2586813

5 March 2021 DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Emilis Šermukšnis, Arvydas Matulionis

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116871D (2021) https://doi.org/10.1117/12.2586813
Event: SPIE OPTO, 2021, Online Only

Abstract

We report the direct current (DC) and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors (HFETs) on sapphire substrates. The devices fabricated using Al2O3 as the gate dielectric with a gate length of 1.5 um and a gate width of 75 um exhibited a pinch-off voltage of −4.0 V and a maximum peak transconductance of 63 mS/mm. A current gain cutoff frequency fT of 5.0 GHz was achieved, highest among ZnO-based FETs. The corresponding electron velocity of above 1E7 cm/s estimated based on the gate transit time inches closer to the theoretical peak velocity in ZnO (3.5E7 cm/s). This value is significantly higher than the previously reported values in ZnO-based HFETs, which is attributed to the two-dimensional electron gas (2DEG) concentration at or near the resonance of longitudinal optical (LO)-phonon and plasmon frequencies as well as the improved quality of the heterostructure owing to optimized ZnO buffer growth and BeO and MgO alloying in the barrier. To probe the high-frequency response of the HFETs, extrinsic and intrinsic parameters of the small-signal equivalent circuit for the BeMgZnO/ZnO HFETs were investigated using the hybrid extraction method.

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Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Emilis Šermukšnis, and Arvydas Matulionis "DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116871D (5 March 2021); https://doi.org/10.1117/12.2586813

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KEYWORDS

Field effect transistors

Heterojunctions

Microwave radiation

Zinc oxide

Dielectrics

Fourier transforms

Plasmons

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