Paper
1 July 1990 Sub-electron noise charge-coupled devices
Charles E. Chandler, Richard A. Bredthauer, James R. Janesick, James A. Westphal
Author Affiliations +
Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19457
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States
Abstract
A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles E. Chandler, Richard A. Bredthauer, James R. Janesick, and James A. Westphal "Sub-electron noise charge-coupled devices", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19457
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Cited by 23 scholarly publications.
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KEYWORDS
Charge-coupled devices

Field effect transistors

Electrons

Capacitance

Cadmium sulfide

Interference (communication)

Clocks

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