Leveraging x-ray scatterometry and machine learning to enable robust and high-throughput optical critical dimension metrology for advanced 3D flash memory contact hole profile

Houssam Chouaib; Teng Shi; Anderson Chou; Shinya Kawanami; Masatomo Takahara; Yeunchian Luo; Zhijie Leiyin; Bin Zeng; Derrick Shaughnessy; Zhengquan Tan; Kaori Sasaki; Naoki Momotori

doi:10.1117/12.3010992

9 April 2024 Leveraging x-ray scatterometry and machine learning to enable robust and high-throughput optical critical dimension metrology for advanced 3D flash memory contact hole profile

Houssam Chouaib, Teng Shi, Anderson Chou, Shinya Kawanami, Masatomo Takahara, Yeunchian Luo, Zhijie Leiyin, Bin Zeng, Derrick Shaughnessy, Zhengquan Tan, Kaori Sasaki, Naoki Momotori

Author Affiliations +

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129553F (2024) https://doi.org/10.1117/12.3010992
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

3D flash memory structures have been rapidly developed over the past decade to achieve a high density of stacked memory cells with periodic channel holes across the device. Small deviations of the hole shape can result in considerable variations in device performance and product yield. Understanding the behavior and performance of these high-aspect-ratio structures plays a vital role in such complex vertically stacked structures. Memory hole critical dimensions (CDs) serve as the key information to evaluate the performance of 3D flash memory devices, and these CDs are typically measured by rigorous coupled wave analysis (RCWA) based optical metrology that requires costly and destructive scanning electron microscopy (SEM) or transmission electron microscopy (TEM) reference. Here, we utilize critical dimension smallangle x-ray scatterometry (CD-SAXS) that provides reliable and nondestructive ground truth reference to extract a large amount of detailed hole shape information within a practical time scale compared to traditional lengthy TEM measurements. We leverage advanced data analytics and machine learning techniques to enable an optical critical dimension metrology solution along with the desired amount of reference from CD-SAXS measurements for the memory hole profile investigation. This proposed methodology opens up a new venue for a high-throughput, robust and accurate hole CD profile measurement for the fast-paced and high-volume 3D flash memory manufacturing technology.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Houssam Chouaib, Teng Shi, Anderson Chou, Shinya Kawanami, Masatomo Takahara, Yeunchian Luo, Zhijie Leiyin, Bin Zeng, Derrick Shaughnessy, Zhengquan Tan, Kaori Sasaki, and Naoki Momotori "Leveraging x-ray scatterometry and machine learning to enable robust and high-throughput optical critical dimension metrology for advanced 3D flash memory contact hole profile", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553F (9 April 2024); https://doi.org/10.1117/12.3010992

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