Small-signal analysis of quantum-well BARITT diodes based on silicon carbide

Vladimir M. Aroutiounian; Vahe V. Buniatyan; P. Soukiassian

doi:10.1117/12.455421

27 December 2001 Small-signal analysis of quantum-well BARITT diodes based on silicon carbide

Vladimir M. Aroutiounian, Vahe V. Buniatyan, P. Soukiassian

Proceedings Volume 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications; (2001) https://doi.org/10.1117/12.455421
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Impedance characteristics of semiconductor barrier-injection transit-time diodes (BARITT) structures made of Silicon Carbide containing quantum wells in the drift region are theoretically examined. It is shown that the magnitude of the negative dynamic resistance can be increased due to trapping and escape effects of injected charge carriers in quantum wells. It is shown that the negative resistance of the BARITT structure made of different polytypes of SiC is one order of magnitude higher in absolute value in comparison with the Si structure, all other factors being equal. In the proposed structure significantly higher operation frequencies can be realized in comparison with usual BARITT'S.

Citation Download Citation

Vladimir M. Aroutiounian, Vahe V. Buniatyan, and P. Soukiassian "Small-signal analysis of quantum-well BARITT diodes based on silicon carbide", Proc. SPIE 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, (27 December 2001); https://doi.org/10.1117/12.455421

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